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The Asia Pacific Gallium Nitride (GaN) Semiconductor Devices Market would witness market growth of 18% CAGR during the forecast period (2017-2023). The Asia Pacific region would witness rapid growth during the forecast period. Technological advancements have led to the need for efficient and high-performance RF components in the region. The region would offer tremendous growth opportunities for GaN-based power electronics and optoelectronics.
Growing demand for power electronics, which consume relatively lesser power and also are energy efficient are the factors that would limit the market growth. GaN-based semiconductors possess dynamic electrical and chemical properties, such as high-voltage breakdown and saturation velocity making them a great choice in wide range of switching devices.
Based on Product Type, the market report segments the market into Opto-Semiconductors, Power Semiconductors, and GaN Radio Frequency Devices. Based on Wafer Size, the market report segments the market into 4 inch, 2 inch, 8 inches, and 6 inches. Based on Application, the Gallium Nitride (GaN) Semiconductor Devices market report segments the market into Information & Communication Technology, Consumer Electronics, Aerospace & Defense, Automotive, Industrial & Power, Healthcare, and Others Based on Countries, the Gallium Nitride (GaN) Semiconductor Devices market segments the market into China, Japan, India, South Korea, Singapore, Malaysia, and Rest of Asia Pacific.
The market research report covers the competition analysis of key stake holders of the Asia Pacific Gallium Nitride (GaN) Semiconductor Devices Market. Key companies profiled in the report include NextGen Power Systems, Inc., Cree, Inc. (Wolfspeed), Efficient Power Conversion Corporation, Inc., GaN Systems, Inc., Toshiba Corporation, Fujitsu Limited, NXP Semiconductors N.V., Texas Instruments Incorporated, Infineon Technologies AG, and Qorvo, Inc.