The Global High Electron Mobility Transistor Market size is expected to reach $9.4 billion by 2030, rising at a market growth of 7.3% CAGR during the forecast period.
Consumer electronics, such as smartphones and tablets, demand high-speed data communication capabilities for internet browsing, video streaming, and online gaming. Therefore, the Consumer Electronics segment acquired $1,599.2 million in 2022. HEMTs are well-suited for high-frequency applications, making them crucial components in constructing high-speed transceivers and signal processing units that enable rapid data communication. The proliferation of wireless technologies in consumer electronics, including Wi-Fi, Bluetooth, and others, requires components that can operate at high frequencies. HEMTs are utilized in designing power amplifiers and transceivers for wireless communication, which contributes to developing efficient and reliable connectivity devices. Some of the factors impacting the market are proliferation of wireless and 5G technologies, growing implementation in radar and satellite communication, and manufacturing complexities related to HEMT.
5G networks operate at higher frequencies compared to previous generations. HEMTs are well-suited for high-frequency applications, making them essential for constructing components operating in the millimeter-wave and microwave frequency bands used in 5G communication. Power amplifiers in 5G base stations are crucial for transmitting signals over longer distances and through obstacles. HEMTs, with their high-power capabilities, are employed in these amplifiers to ensure efficient and reliable signal transmission. Additionally, Radar and satellite communication systems often operate in the microwave and millimeter-wave frequency bands. Radar and satellite communication systems require high-speed signal processing to analyze and interpret incoming data. HEMTs, with their high-speed capabilities, can be used in constructing transceivers and signal processing components, contributing to these systems' overall speed and efficiency. This is particularly important for satellite communication systems, where components are needed to withstand the harsh conditions of space. HEMTs are crucial components in constructing these antennas, enabling the rapid and accurate adjustments required for beamforming, leading to enhanced system capabilities. These factors will pose lucrative growth prospects for the market.
However, HEMTs often utilize compound semiconductors, such as Gallium Nitride (GaN) or Indium Phosphide (InP), with critical material properties for their performance. The manufacturing processes for these materials can be more intricate than traditional silicon-based processes, contributing to increased complexity. HEMTs require epitaxial growth of semiconductor layers, a process where single crystal layers are deposited on a crystal substrate. Achieving the desired material quality and thickness with precision is crucial for HEMT performance but involves sophisticated equipment and control, adding to manufacturing complexity. Achieving low contact resistance and uniformity across the device can be challenging, requiring sophisticated deposition and patterning techniques. These factors will hamper the growth of the market in the upcoming years.
On the basis of end-use, the market is divided into consumer electronics, automotive, industrial, aerospace & defense, and others. In 2022, the aerospace and defense segment witnessed a substantial revenue share in the market. Radar systems make extensive use of HEMTs on account of their capability to function at high frequencies. The aerospace and defense sector heavily relies on radar technology for surveillance, target tracking, and threat detection. The demand for advanced radar systems has driven the adoption of HEMTs, which provide the high-frequency performance required for radar applications. The aerospace and defense industry relies on sophisticated communication systems for secure and efficient information exchange. HEMTs play a crucial role in developing high-frequency communication devices essential for military applications. These factors will help in the expansion of the segment.
Based on type, the market is segmented into gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs), and others. In 2022, the gallium arsenide (GaAs) segment garnered a significant revenue share in the market. GaAs HEMTs are known for their excellent high-frequency performance. This makes them ideal for applications in the GHz and terahertz ranges, such as in high-frequency communication systems and radar. Demand for high-frequency and high-speed electronic components has increased with the proliferation of mobile devices and the need for faster data transfer rates. GaAs HEMTs, with their high electron mobility, are well-suited for these applications. Therefore, the segment will expand rapidly in the coming years.
| Report Attribute | Details |
|---|---|
| Market size value in 2022 | USD 5.4 Billion |
| Market size forecast in 2030 | USD 9.4 Billion |
| Base Year | 2022 |
| Historical Period | 2019 to 2021 |
| Forecast Period | 2023 to 2030 |
| Revenue Growth Rate | CAGR of 7.3% from 2023 to 2030 |
| Number of Pages | 225 |
| Number of Table | 290 |
| Report coverage | Market Trends, Revenue Estimation and Forecast, Segmentation Analysis, Regional and Country Breakdown, Porter’s 5 Forces Analysis, Company Profiling, Companies Strategic Developments, SWOT Analysis, Winning Imperatives |
| Segments covered | Type, End-Use, Region |
| Country scope |
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| Companies Included | Qorvo, Inc., Infineon Technologies AG, MACOM Technology Solutions Holdings, Inc., WOLFSPEED, INC., Texas Instruments, Inc., Sumitomo Electric Industries, Ltd., Analog Devices, Inc., Intel Corporation, NXP Semiconductors N.V., Mitsubishi Electric Corporation |
| Growth Drivers |
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| Restraints |
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By region, the market is segmented into North America, Europe, Asia Pacific, and LAMEA. The Asia Pacific segment procured the highest revenue share in the market in 2022. The Asia Pacific region, particularly countries like China, Japan, South Korea, and Taiwan, is a hub for semiconductor manufacturing. The semiconductor industry's growth in these countries has positively influenced the market, as these transistors are essential components in advanced semiconductor devices. Major consumers of mobile devices and communication devices tend to be in the Asia-Pacific region. HEMTs are commonly used in the RF amplifiers of these devices, making them crucial for the region's expanding mobile and telecommunications industry. These factors will boost the demand in the segment in the coming years.
Free Valuable Insights: Global High Electron Mobility Transistor Market size to reach USD 9.4 Billion by 2030
The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Qorvo, Inc., Infineon Technologies AG, MACOM Technology Solutions Holdings, Inc., WOLFSPEED, INC., Texas Instruments, Inc., Sumitomo Electric Industries, Ltd., Analog Devices, Inc., Intel Corporation, NXP Semiconductors N.V., Mitsubishi Electric Corporation
By Type
By End-Use
By Geography
This Market size is expected to reach $9.4 billion by 2030.
Proliferation of wireless and 5G technologies are driving the Market in coming years, however, Manufacturing complexities related to HEMT restraints the growth of the Market.
Qorvo, Inc., Infineon Technologies AG, MACOM Technology Solutions Holdings, Inc., WOLFSPEED, INC., Texas Instruments, Inc., Sumitomo Electric Industries, Ltd., Analog Devices, Inc., Intel Corporation, NXP Semiconductors N.V., Mitsubishi Electric Corporation
The expected CAGR of this Market is 7.3% from 2023 to 2030.
The Gallium Nitride (GaN) segment is leading the Market, by Type in 2022; thereby, achieving a market value of $4.3 billion by 2030.
The Asia Pacific region dominated the Market, by Region in 2022, and would continue to be a dominant market till 2030; thereby, achieving a market value of $3.5 billion by 2030.
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