“Global IGBT And Super Junction MOSFET Market to reach a market value of USD 31.43 Billion by 2031 growing at a CAGR of 11.6%”
The Global IGBT And Super Junction MOSFET Market size is expected to reach $31.43 billion by 2031, rising at a market growth of 11.6% CAGR during the forecast period.
As electronic devices become more energy-efficient, IGBTs and super junction MOSFETs are increasingly used in applications like power adapters, chargers, and home appliances. Their ability to handle high frequency switching and low power loss contributes to improved energy efficiency and smaller form factors in consumer electronics. This segment continues to grow as the demand for portable, compact, and energy-efficient devices rises, particularly in the smartphone, laptop, and smart home sectors. Thus, the consumer electronics segment held 18% revenue share in the market in 2023.
The major strategies followed by the market participants are partnerships as the key developmental strategy to keep pace with the changing demands of end users. For instance, In November, 2024, Rohm Co., Ltd. and Valeo are collaborating to develop next-generation power electronics for electric vehicles. They are optimizing power modules, including SiC technology, to enhance powertrain efficiency, reduce heat, and improve the performance of high-voltage inverters for BEVs and PHEVs. Additionally, In February, 2024, Infineon Technologies and Honda Motor Co., Ltd. have signed a Memorandum of Understanding (MoU) to collaborate on automotive semiconductor solutions, focusing on power semiconductors, ADAS, and E/E architectures, supporting advanced vehicle technologies and accelerating time-to-market innovations.
Based on the Analysis presented in the KBV Cardinal matrix; Texas Instruments, Inc., STMicroelectronics N.V., NXP Semiconductors N.V. and ABB Group are the forerunners in the IGBT And Super Junction MOSFET Market. Companies such as Infineon Technologies AG and Mitsubishi Electric Corporation are some of the key innovators in IGBT And Super Junction MOSFET Market. In March, 2022, NXP Semiconductors N.V. and Hitachi Energy collaborate to accelerate SiC MOSFET adoption in e-mobility, enhancing electric vehicle powertrain efficiency. Their combined solution, featuring NXP’s GD3160 gate driver and Hitachi’s RoadPak SiC modules, improves vehicle range, efficiency, and reduces carbon emissions.
Industrial applications increasingly prioritize energy efficiency to reduce operational costs and meet stringent environmental regulations. IGBTs and super junction MOSFETs play a crucial role in improving the power conversion efficiency of industrial systems, including manufacturing machines, robotics, automation systems, and power supplies. Thus, as industrial processes become more digitized and automated, the need for reliable, energy-efficient power components like IGBTs and super junction MOSFETs is expected to increase.
Additionally, the growing demand for energy-efficient heating, ventilation, and air conditioning (HVAC) systems is an important driver of the IGBT and super junction MOSFET market. These power semiconductor devices are integral in improving the energy efficiency of electric heating and cooling systems, such as heat pumps and electric air conditioners, by controlling the power conversion in these systems. Hence, as the adoption of energy-efficient HVAC systems rises in residential and commercial markets, these components are expected to be in demand.
One of the primary challenges in the IGBT and super junction MOSFET market is the high manufacturing cost and complexity associated with their production. These components require advanced materials, such as high-purity silicon or silicon carbide, and intricate fabrication processes to ensure high performance and reliability. Therefore, high manufacturing costs and complex production processes impede the market's growth.
The leading players in the market are competing with diverse innovative offerings to remain competitive in the market. The above illustration shows the percentage of revenue shared by some of the leading companies in the market. The leading players of the market are adopting various strategies in order to cater demand coming from the different industries. The key developmental strategies in the market are Partnerships, Collaborations & Agreements.
The super junction MOSFET is further subdivided into discrete super junction MOSFET and super junction MOSFET Module. The super junction MOSFET Module segment held 42% revenue share in the market in 2023. Super junction MOSFET modules integrate multiple super junction MOSFETs and related components into a single package, enabling them to handle higher power and deliver improved thermal management.
On the basis of application, the market is segmented into energy & power, inverter & UPS, consumer electronics, industrial system, electric vehicle, and others. The energy & power segment recorded 23% revenue share in the market in 2023. This segment is critical in power generation, distribution, and transmission, where IGBTs and super junction MOSFETs are widely used for energy conversion and control.
Based on type, the market is divided into IGBT and super junction MOSFET. In 2023, the super junction MOSFET segment held 33% revenue share in the market. Super junction MOSFETs are favored for their high efficiency and lower on-state resistance, making them ideal for applications requiring improved power efficiency and compact designs.
The IGBT segment is further subdivided into IGBT module and discrete IGBT. The discrete IGBT segment acquired 44% revenue share in the market in 2023. Discrete IGBTs are widely used in lower-power applications compared to IGBT modules, where a single IGBT device is required for switching and control. These devices are commonly found in motor control, power supplies, and automotive systems applications.
Free Valuable Insights: Global IGBT And Super Junction MOSFET Market size to reach USD 31.43 Billion by 2031
The IGBT and Super Junction MOSFET market is highly competitive, driven by the growing demand for energy-efficient power semiconductor devices across industries like automotive, renewable energy, and industrial automation. Companies focus on innovations to enhance performance, reduce power losses, and improve thermal efficiency. The competition is fueled by advancements in wide-bandgap technologies like silicon carbide (SiC) and gallium nitride (GaN). Regional manufacturers compete with global players by catering to cost-sensitive markets, creating a dynamic landscape shaped by technological and cost-driven strategies.
Region-wise, the market is analyzed across North America, Europe, Asia Pacific, and LAMEA. In 2023, the North America region witnessed 30% revenue share in the market. The demand for these semiconductor components is driven by the region’s strong presence in industries like energy and power, automotive (especially electric vehicles), and consumer electronics.
| Report Attribute | Details |
|---|---|
| Market size value in 2023 | USD 13.34 Billion |
| Market size forecast in 2031 | USD 31.43 Billion |
| Base Year | 2023 |
| Historical Period | 2020 to 2022 |
| Forecast Period | 2024 to 2031 |
| Revenue Growth Rate | CAGR of 11.6% from 2024 to 2031 |
| Number of Pages | 304 |
| Number of Tables | 444 |
| Report coverage | Market Trends, Revenue Estimation and Forecast, Segmentation Analysis, Regional and Country Breakdown, Competitive Landscape, Market Share Analysis, Porter’s 5 Forces Analysis, Company Profiling, Companies Strategic Developments, SWOT Analysis, Winning Imperatives |
| Segments covered | Type, Application, Region |
| Country scope |
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| Companies Included | ON Semiconductor Corporation, STMicroelectronics N.V., NXP Semiconductors N.V., Texas Instruments, Inc., Rohm Co., Ltd., Infineon Technologies AG, Mitsubishi Electric Corporation, Fuji Electric Co. Ltd., ABB Group and Renesas Electronics Corporation |
By Type
By Application
By Geography
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