Insulated-Gate Bipolar Transistors (IGBTs) Market

Global Insulated-Gate Bipolar Transistors (IGBTs) Market Size, Share & Trends Analysis Report By Power Rating (High Power, Medium Power and Low Power), By Type (IGBT Module and Discrete IGBT), By Application, By Regional Outlook and Forecast, 2023 - 2030

Report Id: KBV-20855 Publication Date: March-2024 Number of Pages: 384
2022
USD 8.8 Billion
2030
USD 14.2 Billion
CAGR
6.3%
Historical Data
2019 to 2021

“Global Insulated-Gate Bipolar Transistors (IGBTs) Market to reach a market value of USD 14.2 Billion by 2030 growing at a CAGR of 6.3%”

Analysis of Market Size & Trends

The Global Insulated-Gate Bipolar Transistors (IGBTs) Market size is expected to reach $14.2 billion by 2030, rising at a market growth of 6.3% CAGR during the forecast period. In the year 2022, the market attained a volume of 91,869.5 thousand units, experiencing a growth of 22.9% (2019-2022).

Many consumer electronics appliances, such as air conditioners, refrigerators, and washing machines, adopt inverter technology. Thus, the consumer electronics segment acquired $1,271.7 million revenue in 2022. IGBTs play a crucial role in inverter circuits, enabling variable speed operation and improving overall efficiency in these appliances.

Insulated-Gate Bipolar Transistors (IGBTs) Market Size - Global Opportunities and Trends Analysis Report 2019-2030

IGBTs are fundamental in power converters and inverters, converting electrical energy from one form to another. In applications such as motor drives, renewable energy systems, and industrial equipment, power electronics utilizing IGBTs facilitate efficient energy conversion. These applications are crucial for various sectors, including telecommunications, data centers, and critical infrastructure, where reliable power is essential.

Additionally, the increased adoption of variable frequency drives (VFDs) is a significant driver for the market. VFDs, also known as adjustable frequency drives or inverters, utilize IGBTs for motor control and speed regulation in various applications. Hence, increased adoption of variable frequency drives is driving the growth of the market.

However, the production of high-quality IGBTs involves sophisticated manufacturing processes and the use of advanced materials. These processes and materials can contribute to elevated manufacturing costs, impacting the overall cost structure of IGBTs. Therefore, the high initial cost is impeding the growth of the market.

Driving and Restraining Factors
Insulated-Gate Bipolar Transistors (IGBTs) Market
  • Growing demand for energy efficient power electronics
  • Increased implementation of variable frequency drives (VFDs)
  • Expansion of the semiconductor industry
  • High initial costs of insulated-gate bipolar transistors (IBGTs)
  • Concerns of voltage drop across the devices
  • Rising integration with renewable energy
  • Expansion of industry 4.0 and industrial IoT
  • Competitive pressure from alternative technologies
  • Reliability and durability concerns related to IGBTs

By Power Rating Analysis

Based on power rating, the market is categorized into high power, medium power, and low power. The medium power segment witnessed a remarkable 31.2% revenue share in the market in 2022. This makes them versatile for a range of applications.

By Type Analysis

On the basis of type, the market is segmented into discrete IGBT and IGBT module. In 2022, the discrete IGBT segment attained a noteworthy 31.3% revenue share in the market. Designers can select and integrate additional components based on specific application requirements.

Insulated-Gate Bipolar Transistors (IGBTs) Market Share and Industry Analysis Report 2022

By Application Analysis

Based on application, the market is divided into energy & power, consumer electronics, inverter & UPS, electric vehicle, industrial system, and others. In 2022, the industrial system segment held a considerable 25% revenue share in the market. They facilitate the efficient charging and discharging of energy and enabling the storage of excess energy during low-demand periods.

Free Valuable Insights: Global Insulated-Gate Bipolar Transistors (IGBTs) Market size to reach USD 14.2 Billion by 2030

By Regional Analysis

Region-wise, the market is analyzed across North America, Europe, Asia Pacific, and LAMEA. In 2022, the Asia Pacific region generated 45.2% revenue share in the market. IGBTs are essential components in inverters that convert renewable energy sources into usable electrical power for the grid.

Insulated-Gate Bipolar Transistors (IGBTs) Market Report Coverage
Report Attribute Details
Market size value in 2022 USD 8.8 Billion
Market size forecast in 2030 USD 14.2 Billion
Base Year 2022
Historical Period 2019 to 2021
Forecast Period 2023 to 2030
Revenue Growth Rate CAGR of 6.3% from 2023 to 2030
Number of Pages 384
Number of Table 730
Quantitative Data Volume in Thousand Units, Revenue in USD Billion, and CAGR from 2019 to 2030
Report coverage Market Trends, Revenue Estimation and Forecast, Segmentation Analysis, Regional and Country Breakdown, Porter’s 5 Forces Analysis, Company Profiling, Companies Strategic Developments, SWOT Analysis, Winning Imperatives
Segments covered Type, Power Rating, Application, Region
Country scope
  • North America (US, Canada, Mexico, and Rest of North America)
  • Europe (Germany, UK, France, Russia, Spain, Italy, and Rest of Europe)
  • Asia Pacific (China, Japan, India, South Korea, Singapore, Malaysia, and Rest of Asia Pacific)
  • LAMEA (Brazil, Argentina, UAE, Saudi Arabia, South Africa, Nigeria, and Rest of LAMEA)
Companies Included Infineon Technologies AG, Toshiba Corporation, STMicroelectronics N.V., NXP Semiconductors N.V., ABB Group, Fuji Electric Co. Ltd., Mitsubishi Electric Corporation, Renesas Electronics Corporation, Rohm Co., Ltd., Vishay Intertechnology, Inc.
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Recent Strategies Deployed in the Market

  • Nov-2023: Infineon Technologies AG took over GaN Systems, a company specializing in developing and manufacturing gallium nitride (GaN) power semiconductors for efficient and high-performance electronic systems. Through this acquisition, Infineon would strengthen its foothold in various rapidly expanding markets such as automotive, motor control, and green industrial power, consolidating its position in power components.
  • Mar-2023: Toshiba Corporation introduced GT30J65MRB, a high-voltage 650V discrete insulated gate bipolar transistor (IGBT). The new IGBT incorporates an integrated diode with a forward voltage of 1.20V (typ.), approximately 43% lower than that of the GT50JR22, enhancing overall equipment efficiency.
  • May-2020: Toshiba Corporation launched GT20N135SRA IGBT, a 1350V insulated gate bipolar transistor (IGBT) optimized for high-power applications. The GT20N135SRA IGBT boasts a collector-emitter saturation voltage (VCE(sat)) of 1.60 V (typ.) and a diode forward voltage (VF) of 1.75 V, marking reductions of about 10% and 21% respectively versus conventional models, increases operational efficiency.
  • Jan-2023: Renesas Electronics Corporation launched RAJ2930004AGM, a novel gate driver IC tailored for high-voltage power components like IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs in electric vehicle (EV) inverters. The RAJ2930004AGM suits various applications like on-board chargers and DC/DC converters utilizing power semiconductors.

List of Key Companies Profiled

  • Infineon Technologies AG
  • Toshiba Corporation
  • STMicroelectronics N.V.
  • NXP Semiconductors N.V.
  • ABB Group
  • Fuji Electric Co. Ltd.
  • Mitsubishi Electric Corporation
  • Renesas Electronics Corporation
  • Rohm Co., Ltd.
  • Vishay Intertechnology, Inc.

Insulated-Gate Bipolar Transistors (IGBTs) Market Report Segmentation

By Power Rating (Volume, Thousand Units, USD Billion, 2019-2030)

  • High Power
  • Medium Power
  • Low Power

By Type (Volume, Thousand Units, USD Billion, 2019-2030)

  • IGBT Module
  • Discrete IGBT

By Application (Volume, Thousand Units, USD Billion, 2019-2030)

  • Energy & Power
  • Inverter & UPS
  • Electric Vehicle
  • Industrial System
  • Consumer Electronics
  • Others

By Geography (Volume, Thousand Units, USD Billion, 2019-2030)

  • North America
    • US
    • Canada
    • Mexico
    • Rest of North America
  • Europe
    • Germany
    • UK
    • France
    • Russia
    • Spain
    • Italy
    • Rest of Europe
  • Asia Pacific
    • China
    • Japan
    • India
    • South Korea
    • Singapore
    • Malaysia
    • Rest of Asia Pacific
  • LAMEA
    • Brazil
    • Argentina
    • UAE
    • Saudi Arabia
    • South Africa
    • Nigeria
    • Rest of LAMEA

Frequently Asked Questions About This Report

This Market size is expected to reach $14.2 billion by 2030.

Growing demand for energy efficient power electronics are driving the Market in coming years, however, High initial costs of insulated-gate bipolar transistors (IBGTs) restraints the growth of the Market.

Infineon Technologies AG, Toshiba Corporation, STMicroelectronics N.V., NXP Semiconductors N.V., ABB Group, Fuji Electric Co. Ltd., Mitsubishi Electric Corporation, Renesas Electronics Corporation, Rohm Co., Ltd., Vishay Intertechnology, Inc.

In the year 2022, the market attained a volume of 91,869.5 thousand units, experiencing a growth of 22.9% (2019-2022).

The IGBT Module segment is leading the Market, By Type in 2022; there by, achieving a market value of $9.2 billion by 2030.

The Asia Pacific region dominated the Market, By Region in 2022, and would continue to be a dominant market till 2030; there by, achieving a market value of $6.5 billion by 2030.

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