Europe Gallium Nitride (GaN) Semiconductor Devices Market Size to register a growth of 15.1% CAGR

According to a new report Europe Gallium Nitride (GaN) Semiconductor Devices Market, published by KBV research, the Europe Gallium Nitride (GaN) Semiconductor Devices Market Size would witness market growth of 15.1% CAGR during the forecast period (2017 - 2023).

The 4 inch market holds the largest market share in Europe Gallium Nitride Semiconductor Devices Market by Wafer Size in 2016, and would continue to be a dominant market till 2023. The 8 inch market is expected to witness a CAGR of 16% during (2017 - 2023). Additionally, the 6 inch market is expected to witness a CAGR of 16.9% during (2017 - 2023).

Key Market Segments - Europe Gallium Nitride (GaN) Semiconductor Devices Market

The Germany market holds the largest market share in Europe Gallium Nitride Semiconductor Devices in Information & Communication Technology Market by Country in 2016, and would continue to be a dominant market till 2023; growing at a CAGR of 11.9 % during the forecast period. The UK market is expected to witness a CAGR of 13.3% during (2017 - 2023) in Europe Gallium Nitride Semiconductor Devices in Consumer Electronics Market. Additionally, The France market is expected to witness a CAGR of 16.2% during (2017 - 2023) in Europe Gallium Nitride Semiconductor Devices in Aerospace & Defense Market.

The Opto-Semiconductors market holds the largest market share in Italy Gallium Nitride Semiconductor Devices Market by Product Type in 2016, and would continue to be a dominant market till 2023. The Power Semiconductors market would garner market size of $11.6 million by 2023.

Full Report: https://www.kbvresearch.com/europe-gallium-nitride-gan-semiconductor-devices-market/

The market research report has exhaustive quantitative insights providing a clear picture of the market potential in various segments across the countries in the region. The key impacting factors of the Europe Gallium Nitride (GaN) Semiconductor Devices Market have been discussed in the report with the competitive analysis and elaborated company profiles of NextGen Power Systems, Inc., Cree, Inc. (Wolfspeed), Efficient Power Conversion Corporation, Inc., GaN Systems, Inc., Toshiba Corporation,Fujitsu Limited,NXP Semiconductors N.V., Texas Instruments Incorporated, Infineon Technologies AG, and Qorvo, Inc.

Europe Gallium Nitride (GaN) Semiconductor Devices Market Size Segmentation

By Product Type

• Opto-Semiconductors
• Power Semiconductors
• GaN Radio Frequency Devices

By Wafer Size

• 4 inch
• 2 inch
• 8 inch
• 6 inch

By Application

• Information & Communication Technology
• Consumer Electronics
• Aerospace & Defense
• Automotive
• Industrial & Power
• Healthcare
• Others

By Country

• Germany Gallium Nitride (GaN) Semiconductor Devices Market
• UK Gallium Nitride (GaN) Semiconductor Devices Market
• France Gallium Nitride (GaN) Semiconductor Devices Market
• Russia Gallium Nitride (GaN) Semiconductor Devices Market
• Spain Gallium Nitride (GaN) Semiconductor Devices Market
• Italy Gallium Nitride (GaN) Semiconductor Devices Market
• Rest of Europe Gallium Nitride (GaN) Semiconductor Devices Market

Companies Profiled

• NextGen Power Systems, Inc.
• Cree, Inc. (Wolfspeed)
• Efficient Power Conversion Corporation, Inc.
• GaN Systems, Inc.
• Toshiba Corporation
• Fujitsu Limited
• NXP Semiconductors N.V.
• Texas Instruments Incorporated
• Infineon Technologies AG
• Qorvo, Inc.

Unique Offerings from KBV Research

• Exhaustive coverage of Europe Gallium Nitride (GaN) Semiconductor Devices Market
• Highest number of market tables and figures
• Subscription based model available
• Guaranteed best price
• Assured post sales research support with 10% customization free

Related Reports:

Global Gallium Nitride (GaN) Semiconductor Devices Market (2017-2023)

North America Gallium Nitride (GaN) Semiconductor Devices Market (2017-2023)

Asia Pacific Gallium Nitride (GaN) Semiconductor Devices Market (2017-2023)

LAMEA Gallium Nitride (GaN) Semiconductor Devices Market (2017-2023)