Latin America, Middle East and Africa Gallium Nitride (GaN) Semiconductor Devices Market Size to register a growth of 18.6% CAGR

Growth, Trends and Report Highlights

According to a new report LAMEA Gallium Nitride (GaN) Semiconductor Devices Market, published by KBV research, the LAMEA Gallium Nitride (GaN) Semiconductor Devices Market Size would witness market growth of 18.6% CAGR during the forecast period (2017-2023).

The Brazil market holds the largest market share in LAMEA 4 inch Gallium Nitride Semiconductor Devices Market by Country in 2016, and would continue to be a dominant market till 2023growing at a CAGR of 17.2 % during the forecast period. The Argentina market is expected to witness a CAGR of 19.1% during (2017-2023) in LAMEA 2 inch Gallium Nitride Semiconductor Devices Market. Additionally, The UAE market is expected to witness a CAGR of 18.2% during (2017-2023) in LAMEA 8 inch Gallium Nitride Semiconductor Devices Market.

The Information & Communication Technology market holds the largest market share in Nigeria Gallium Nitride Semiconductor Devices Market by Application in 2016, and would continue to be a dominant market till 2023; growing at a CAGR of 18.3 % during the forecast period. The Automotive market is expected to witness a CAGR of 19.5% during (2017-2023). Additionally, The Healthcare market would attain market value of $1.3 million by 2023.

Full Report: https://www.kbvresearch.com/lamea-gallium-nitride-gan-semiconductor-devices-market/

The market research report has exhaustive quantitative insights providing a clear picture of the market potential in various segments across the countries in the region. The key impacting factors of the Latin America, Middle East and Africa Gallium Nitride (GaN) Semiconductor Devices Market have been discussed in the report with the competitive analysis and elaborated company profiles of NextGen Power Systems, Inc., Cree, Inc. (Wolfspeed), Efficient Power Conversion Corporation, Inc., GaN Systems, Inc., Toshiba Corporation,Fujitsu Limited,NXP Semiconductors N.V., Texas Instruments Incorporated, Infineon Technologies AG, and Qorvo, Inc.

LAMEA Gallium Nitride (GaN) Semiconductor Devices Market Size Segmentation

By Product Type

• Opto-Semiconductors
• Power Semiconductors
• GaN Radio Frequency Devices

By Wafer Size

• 4 inch
• 2 inch
• 8 inch
• 6 inch

By Application

• Information & Communication Technology
• Consumer Electronics
• Aerospace & Defense
• Automotive
• Industrial & Power
• Healthcare
• Others

By Country

• Brazil Gallium Nitride (GaN) Semiconductor Devices Market
• Argentina Gallium Nitride (GaN) Semiconductor Devices Market
• UAE Gallium Nitride (GaN) Semiconductor Devices Market
• Saudi Arabia Gallium Nitride (GaN) Semiconductor Devices Market
• South Africa Gallium Nitride (GaN) Semiconductor Devices Market
• Nigeria Gallium Nitride (GaN) Semiconductor Devices Market
• Rest of Latin America, Middle East and Africa Gallium Nitride (GaN) Semiconductor Devices Market

Companies Profiled

• NextGen Power Systems, Inc.
• Cree, Inc. (Wolfspeed)
• Efficient Power Conversion Corporation, Inc.
• GaN Systems, Inc.
• Toshiba Corporation
• Fujitsu Limited
• NXP Semiconductors N.V.
• Texas Instruments Incorporated
• Infineon Technologies AG
• Qorvo, Inc.

Related Reports:

Global Gallium Nitride (GaN) Semiconductor Devices Market 

North America Gallium Nitride (GaN) Semiconductor Devices Market 

Europe Gallium Nitride (GaN) Semiconductor Devices Market 

Asia Pacific Gallium Nitride (GaN) Semiconductor Devices Market