North America Gallium Nitride (GaN) Semiconductor Devices Market Size to register a growth of 14.4% CAGR

According to a new report North America Gallium Nitride (GaN) Semiconductor Devices Market, published by KBV research, the North America Gallium Nitride (GaN) Semiconductor Devices Market Size would witness market growth of 14.4% CAGR during the forecast period (2017-2023).

The Opto-Semiconductors market holds the largest market share in North America Gallium Nitride Semiconductor Devices Market by Product Type in 2016, and would continue to be a dominant market till 2023. The Power Semiconductors market is expected to witness a CAGR of 16.4% during (2017-2023).

Key Market Segments - North America Gallium Nitride (GaN) Semiconductor Devices Market

The US market holds the largest market share in North America 4 inch Gallium Nitride Semiconductor Devices Market by Country in 2016, and would continue to be a dominant market till 2023; growing at a CAGR of 12.8 % during the forecast period. The Canada market is expected to witness a CAGR of 16.5% during (2017-2023) in North America 2 inch Gallium Nitride Semiconductor Devices Market. Additionally, the Mexico market is expected to witness a CAGR of 16.8% during (2017-2023) in North America 8 inch Gallium Nitride Semiconductor Devices Market.Source: KBV Research Analysis

The Information & Communication Technology market holds the largest market share in Mexico Gallium Nitride Semiconductor Devices Market by Application in 2016, and would continue to be a dominant market till 2023; growing at a CAGR of 14.4 % during the forecast period. Additionally, the Healthcare market would attain market value of $7.6 million by 2023.

Full Report: https://www.kbvresearch.com/north-america-gallium-nitride-gan-semiconductor-devices-market/

The market research report has exhaustive quantitative insights providing a clear picture of the market potential in various segments across the countries in the region. The key impacting factors of the North America Gallium Nitride (GaN) Semiconductor Devices Market have been discussed in the report with the competitive analysis and elaborated company profiles of NextGen Power Systems, Inc., Cree, Inc. (Wolfspeed), Efficient Power Conversion Corporation, Inc., GaN Systems, Inc., Toshiba Corporation,Fujitsu Limited,NXP Semiconductors N.V., Texas Instruments Incorporated, Infineon Technologies AG, and Qorvo, Inc.

North America Gallium Nitride (GaN) Semiconductor Devices Market Size Segmentation

By Product Type

• Opto-Semiconductors
• Power Semiconductors
• GaN Radio Frequency Devices

By Wafer Size

• 4 inch
• 2 inch
• 8 inch
• 6 inch

By Application

• Information & Communication Technology
• Consumer Electronics
• Aerospace & Defense
• Automotive
• Industrial & Power
• Healthcare
• Others

By Country

• US Gallium Nitride (GaN) Semiconductor Devices Market
• Canada Gallium Nitride (GaN) Semiconductor Devices Market
• Mexico Gallium Nitride (GaN) Semiconductor Devices Market
• Rest of North America Gallium Nitride (GaN) Semiconductor Devices Market

Companies Profiled

• NextGen Power Systems, Inc.
• Cree, Inc. (Wolfspeed)
• Efficient Power Conversion Corporation, Inc.
• GaN Systems, Inc.
• Toshiba Corporation
• Fujitsu Limited
• NXP Semiconductors N.V.
• Texas Instruments Incorporated
• Infineon Technologies AG
• Qorvo, Inc.

Unique Offerings from KBV Research

• Exhaustive coverage of North America Gallium Nitride (GaN) Semiconductor Devices Market
• Highest number of market tables and figures
• Subscription based model available
• Guaranteed best price
• Assured post sales research support with 10% customization free

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