The North America High-k And CVD ALD Metal Precursors Market would witness market growth of 5.7% CAGR during the forecast period (2022-2028).
The ALD method can produce metal and dielectric layers. Insulator materials with a high dielectric constant (k) serve a crucial role in modern semiconductor devices, where they are employed to insulate gates from pathways in transistors and to shield microcircuits from undesired noise with decoupling filter capacitors. Additionally, they are utilized in capacitors that store memory bits in DRAM.
In addition, high-k and ALD/CVD metal precursors play an important role in Very-Large-Scale Integration technology and the scaling of semiconductor devices to 10 nm and even beyond nodes. In order to preserve the capacitance of tiny semiconductor devices, high-k insulators are required. In each alternating pulse, the precursor molecule contacts with the substrate in a self-limiting way, assuring that the reaction finishes when all reactive units on the platform have been consumed.
The type of precursor-surface interaction determines the completion of an ALD cycle. The ALD process can be repeated multiple times to boost the number of thin film layers, depending on the requirements. As ALD is typically performed at low temperatures, which is useful when working with sensitive substrates, several thermally unstable precursors may still be utilized so long as the rate of breakdown is mild.
The region's consumer electronics market is thriving and is expected to grow in the coming years. According to the US Department of Commerce, computer and electronic product exports exceeded $339.4 billion in 2012, accounting for 5.9% of all U.S. manufactured exports. In 2010, semiconductors and related goods, such as microprocessors, integrated circuits, diodes, transistors, memory chips, solar cells, and other optoelectronic devices, accounted for one-fifth of the industry's output, totaling $72.2 billion.
The US market dominated the North America High-k And CVD ALD Metal Precursors Market by Country in 2021, and would continue to be a dominant market till 2028; thereby, achieving a market value of $159 million by 2028. The Canada market is poised to grow at a CAGR of 8.1% during (2022 - 2028). Additionally, The Mexico market would witness a CAGR of 7.1% during (2022 - 2028).
Based on Technology, the market is segmented into Interconnect, Capacitors, and Gates. The report also covers geographical segmentation of High-k And CVD ALD Metal Precursors market. Based on countries, the market is segmented into U.S., Mexico, Canada, and Rest of North America.
Free Valuable Insights: The Global High-k And CVD ALD Metal Precursors Market is Predict to reach $740 Million by 2028, at a CAGR of 6.3%
The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Air Liquide S.A, Air Product & Chemicals, Inc., The Dow Chemical Company, Linde PLC, Merck KGAA, Samsung Electronics Co., Ltd., Nanmat Technology Co. Ltd., Adeka Corporation, Strem Chemicals, Inc., and Colnatec.
By Technology
By Country
Our team of dedicated experts can provide you with attractive expansion opportunities for your business.
Unique Offerings 