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The Insulated-Gate Bipolar Transistors (IGBTs) Market is Predict to reach $14.2 Billion by 2030, at a CAGR of 6.3%

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Insulated-Gate Bipolar Transistors (IGBTs) Market Growth, Trends and Report Highlights

According to a new report, published by KBV research, The Global Insulated-Gate Bipolar Transistors (IGBTs) Market size is expected to reach $14.2 billion by 2030, rising at a market growth of 6.3% CAGR during the forecast period. In the year 2022, the market attained a volume of 91,869.5 thousand units, experiencing a growth of 22.9% (2019-2022).

The High-Power segment is registering a CAGR of 5.8% during (2023 - 2030). High-power IGBTs have higher voltage ratings, allowing them to operate in systems with elevated voltage requirements. This is important for power transmission, distribution, and other high-voltage scenario applications. These IGBTs have higher current-carrying capabilities, enabling them to handle substantial electrical currents. This is particularly crucial in applications like motor drives, where high currents are common.

The IGBT Module segment is leading the Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type in 2022; thereby, achieving a market value of $9.2 billion by 2030. IGBT modules are capable of handling higher power levels compared to discrete IGBTs. The integrated design allows for efficient power switching and management in applications that require substantial power-handling capabilities. IGBT modules find extensive use in various power electronics applications, including motor drives, inverters, converters, and power supplies. They are employed in automotive, industrial automation, and renewable energy industries.

The Energy & Power segment is experiencing a CAGR of 5.6% during (2023 - 2030). The demand for IGBTs in the energy and power sector is driven by their energy efficiency, power handling capabilities, reliability, and cost-effectiveness, making them indispensable components in modern power electronic systems. IGBTs play a crucial role in power conversion and control applications, such as motor drives, uninterruptible power supplies (UPS), and power factor correction (PFC) systems. These devices enable precise control over power flow and voltage regulation, improving the overall performance and reliability of power systems.

Full Report: https://www.kbvresearch.com/insulated-gate-bipolar-transistors-market/

The Asia Pacific region dominated the Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Region in 2022, and would continue to be a dominant market till 2030; thereby, achieving a market value of $6.5 billion by 2030. The North America region is anticipating a CAGR of 5.8% during (2023 - 2030). Additionally, The Europe region would exhibit a CAGR of 6.1% during (2023 - 2030).

List of Key Companies Profiled

  • Infineon Technologies AG
  • Toshiba Corporation
  • STMicroelectronics N.V.
  • NXP Semiconductors N.V.
  • ABB Group
  • Fuji Electric Co. Ltd.
  • Mitsubishi Electric Corporation
  • Renesas Electronics Corporation
  • Rohm Co., Ltd.
  • Vishay Intertechnology, Inc.

Insulated-Gate Bipolar Transistors (IGBTs) Market Report Segmentation

By Power Rating (Volume, Thousand Units, USD Billion, 2019-2030)

  • High Power
  • Medium Power
  • Low Power

By Type (Volume, Thousand Units, USD Billion, 2019-2030)

  • IGBT Module
  • Discrete IGBT

By Application (Volume, Thousand Units, USD Billion, 2019-2030)

  • Energy & Power
  • Inverter & UPS
  • Electric Vehicle
  • Industrial System
  • Consumer Electronics
  • Others

By Geography (Volume, Thousand Units, USD Billion, 2019-2030)

  • North America
    • US
    • Canada
    • Mexico
    • Rest of North America
  • Europe
    • Germany
    • UK
    • France
    • Russia
    • Spain
    • Italy
    • Rest of Europe
  • Asia Pacific
    • China
    • Japan
    • India
    • South Korea
    • Singapore
    • Malaysia
    • Rest of Asia Pacific
  • LAMEA
    • Brazil
    • Argentina
    • UAE
    • Saudi Arabia
    • South Africa
    • Nigeria
    • Rest of LAMEA

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